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| features l suitable for coupling with blue scintillator (lso, gso, etc.) l internal quantum efficiency: 100 % ( =420 nm) l s3590-19: bare chip type (without window) applications l radiation detection (pet, etc.) l x-ray detection photodiode si pin photodiode large area si pin photodiode for scintillation counting S3590-18/-19 !"# $% !"& $% ' ( ( ( () ( (* +!,$%- .,/ & .,/ / % 0 1 1 0 1 0 1 1 0 1 ( .! .! 2 ) /# /# + 1#, 1,& 3 +4! *5 - 1!& 1.. 3 +4& *67 - 1.4 1.8 3 ) +,4 *%9- 1.& 14 3 )( ( ( 9( lx &# : 2( 9 : +8 4 4 %9: 1! 1! 3 % % ;;; < ( ;( +8= .6 5 +, ? 4 4 0>? ( ( ( % +8=;+0>? 4 4 @ a < a' 3>? 3! hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2003 hamamatsu photonics k.k. si pin photodiode S3590-18/-19 cat. no. kpin1039e01 aug. 2003 dn reverse voltage (v) (typ. ta=25 ?c) dark current 1 0.1 100 pa 1 na 100 na 10 na 10 100 reverse voltage (v) (typ. ta=25 ? c) terminal capacitance 1 0.1 10 pf 1 nf 100 pf 10 100 0.45 lead photosensitive surface active area 5.0 0.2 1.25 10 1.78 0.2 0.7 10.0 10.0 white ceramic 14.5 1.4 12.7 + 0 - 0.5 + 0 - 0.5 the coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. wavelength (nm) (typ. ta=25 ? c) photo sensitivity (a/w) 400 200 0 0.1 0.2 0.3 0.7 0.6 0.5 0.4 600 800 1000 qe =100 % s3590-08 S3590-18 spectral response wavelength (nm) (typ. ta=25 ? c) photo sensitivity (a/w) 400 200 0 0.1 0.2 0.3 0.7 0.6 0.5 0.4 600 800 1000 qe =100 % s3590-09 s3590-19 dark current vs. reverse voltage terminal capacitance vs. reverse voltage kpinb0223ea kpinb0224ea kpinb0225ea kpinb0226ea .,/ & .,/ /*6 () - : * b - kpina0098ea |
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